Y. Chiu, Chun‐Hu Cheng, Chun-Yen Chang, Min-Hung Lee, H. Hsu, S. Yen
{"title":"低功耗1T DRAM/NVM多功能存储器，具有陡峭的60 mv / 10年以下操作，快速20 ns速度，以及85°c外推1016耐用性","authors":"Y. Chiu, Chun‐Hu Cheng, Chun-Yen Chang, Min-Hung Lee, H. Hsu, S. Yen","doi":"10.1109/VLSIT.2015.7223671","DOIUrl":null,"url":null,"abstract":"In this work, we report a one-transistor (1T) versatile memory; the memory transistor characteristics achieve sub-60-mV/dec operation and considerably low off-state leakage of 10<sup>-15</sup> A/μm at a supply voltage below 0.5V. The versatile memory features DRAM/NVM functions of large ΔV<sub>T</sub> window of 2.8V, fast 20-ns speed, 10<sup>3</sup>s retention at 85°C, and long extrapolated 10<sup>16</sup> endurance at 85°C, which show the potential for 3D memory application with severe requirement on both high density and low power consumption.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":"{\"title\":\"Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance\",\"authors\":\"Y. Chiu, Chun‐Hu Cheng, Chun-Yen Chang, Min-Hung Lee, H. Hsu, S. Yen\",\"doi\":\"10.1109/VLSIT.2015.7223671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report a one-transistor (1T) versatile memory; the memory transistor characteristics achieve sub-60-mV/dec operation and considerably low off-state leakage of 10<sup>-15</sup> A/μm at a supply voltage below 0.5V. The versatile memory features DRAM/NVM functions of large ΔV<sub>T</sub> window of 2.8V, fast 20-ns speed, 10<sup>3</sup>s retention at 85°C, and long extrapolated 10<sup>16</sup> endurance at 85°C, which show the potential for 3D memory application with severe requirement on both high density and low power consumption.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"90 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"35\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223671\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance
In this work, we report a one-transistor (1T) versatile memory; the memory transistor characteristics achieve sub-60-mV/dec operation and considerably low off-state leakage of 10-15 A/μm at a supply voltage below 0.5V. The versatile memory features DRAM/NVM functions of large ΔVT window of 2.8V, fast 20-ns speed, 103s retention at 85°C, and long extrapolated 1016 endurance at 85°C, which show the potential for 3D memory application with severe requirement on both high density and low power consumption.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
