室温下硅衬底上发射1.54 /spl μ m的Mqw激光器的稳定工作

M. Sugo, H. Mori, Y. Itoh, Y. Sakai, M. Tachikawa
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引用次数: 3

摘要

只提供摘要形式。在连续工作500 h时,MQW激光器没有出现衰减现象。采用气相外延/气相外延混合法制备了高质量的InP薄膜,其x射线振荡曲线为110 arcsec,全宽为一半,位错密度为10/sup 7/ cm/sup -2/,残余应力为2*10/sup 8/ dyn/cm/sup 2/。在室温下进行的初步连续波老化试验结果表明,在每面恒定输出功率为2 mW的情况下,500小时内没有出现工作退化。这种LD似乎是一种有前途的光源候选应用于OEICs(光电集成电路)。>
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stable-cw-operation of a Mqw Laser Emitting at 1.54 /spl mu/m on a Si Substrate at Room Temperature
Summary form only given. The MQW laser exhibits no degradation during 500 h of CW operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor-phase epitaxy method, high-quality InP films with a full width at half maximum for the X-ray rocking curve of 110 arcsec, a dislocation density of 10/sup 7/ cm/sup -2/, and low residual stress of 2*10/sup 8/ dyn/cm/sup 2/ were obtained. Results of a preliminary CW aging test at room temperature showed no operational degradation over 500 h with a constant output power of 2 mW per facet. This LD appears to be a promising light source candidate for application to OEICs (optoelectronic integrated circuits). >
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