30nm隧道场效应晶体管与CMOS逆变器特性的比较

2013 Third International Conference on Advances in Computing and Communications Pub Date : 2013-08-29 DOI:10.1109/ICACC.2013.36

M. Aswathy, N. M. Biju, R. Komaragiri

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引用次数: 7

摘要

隧道场效应晶体管(ttfet)是十纳米尺度MOSFET继承的一个很有前途的候选者。在这些装置中，隧道电流不再被认为是不必要的寄生。本文对沟道长度为30nm的n型和p型tfet的器件结构和性能进行了仿真研究。对TFET逆变器的混合模式仿真和与CMOS逆变器特性的比较表明，TFET逆变器在输出端不需要电平移位，可以成功地实现CMOS的数字化应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of a 30nm Tunnel Field Effect Transistor and CMOS Inverter Characteristics

Tunnel field-effect transistor (TFET) is a promising candidate for the succession of the MOSFET at deca-nanometer dimensions. Tunneling currents are no longer considered as unwanted parasitics in these devices. In this work, the device architecture and performance of both n-type and p-type TFETs with a channel length of 30nm are simulated and studied. Mixed mode simulation of TFET inverter and a comparison with CMOS inverter characteristics show that TFET inverter doesn't need level shifting at the output and can succeed CMOS digital applications.

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2013 Third International Conference on Advances in Computing and Communications

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