利用PSpice对MOSFET短通道效应进行高频噪声模拟

Proceedings of the Nineteenth National Radio Science Conference Pub Date : 2002-11-07 DOI:10.1109/NRSC.2002.1022655

H. Fouad, E. El-Diwany, K. Sharaf, H. El-Hennawy

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引用次数: 0

摘要

利用PSpice模拟器对MOSFET的短通道效应(SCE)噪声进行了仿真，以估计低噪声放大器(LNA)在射频处的真实噪声系数。亚微米MOSFET的噪声已经使用真实电阻进行了模拟，并显示出比PSpice中考虑的长通道MOSFET的预期噪声更大。采用0.5 /spl mu/m CMOS MOSIS工艺设计并仿真了LNA电路。在1ghz频段，仿真结果与计算结果吻合良好。

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High frequency noise simulations of MOSFET's short channel effects using PSpice

A simulation of MOSFET's noise due to short channel effects (SCE) is proposed using the PSpice simulator to estimate a realistic noise figure of a low noise amplifier (LNA) at RF. The noise of a submicron MOSFET has been simulated using real resistors and shown to be greater than the noise expected from long-channel MOSFETs which are considered in PSpice. The LNA circuits were designed and simulated with a 0.5 /spl mu/m CMOS MOSIS process. At 1 GHz, the simulations and calculations agree well.

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Proceedings of the Nineteenth National Radio Science Conference

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