N-MOS晶体管热载流子退化及寿命预测新方法

MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference Pub Date : 2006-05-16 DOI:10.1109/MELCON.2006.1653053

F. Kaçar, A. Kuntman, H. Kuntman

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引用次数: 4

摘要

本文通过在应力电压条件下工作，观察了N-MOS晶体管的漏极电流和阈值电压的下降。利用观测结果对热载流子的影响进行了统计研究，并提出了一种新的统计建模方法来替代文献中给出的方法。对退化的观测值和估计值进行了比较

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A New Approach of Hot-Carrier Degradation and Lifetime Prediction for N-MOS Transistors

In this paper the degradation in the drain current and threshold voltage of the N-MOS transistors are observed by operating the device under stress voltage conditions. Using the observation results the effect of hot-carriers was investigated statistically and a new statistical method for modeling was proposed to be an alternative to those given in the literature. The observed and the estimated values of the degradation are compared

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MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference

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