基于亚量子电导桥RAM的超低功耗非易失性存储器设计

2016 IEEE 8th International Memory Workshop (IMW) Pub Date : 2016-05-15 DOI:10.1109/IMW.2016.7493566

Nathan Gonzales, J. Dinh, D. Lewis, N. Gilbert, Bard Pedersen, D. Kamalanathan, J. Jameson, S. Hollmer

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引用次数: 4

摘要

电桥RAM (CBRAM)存储单元提供速度、电压和能量优于浮栅闪存单元。在这里，我们描述了一种存储器设计，它将这些电池级的优势提升到产品级，实现了比典型的基于闪存的设计低100倍的读写功耗和10倍的待机功耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Ultra Low-Power Non-Volatile Memory Design Enabled by Subquantum Conductive-Bridge RAM

Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages over floating gate flash cells. Here, we describe a memory design which carries these cell-level advantages up to the product level, achieving 100x lower read and write power and 10x lower standby power than typical flash-based designs.

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来源期刊

2016 IEEE 8th International Memory Workshop (IMW)

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