{"title":"利用玻尔兹曼网络提高SET/MOS混合A/D转换器的抗扰度","authors":"Zihan Zhang, Chunhong Chen","doi":"10.1109/NANO.2017.8117259","DOIUrl":null,"url":null,"abstract":"Single-electron-transistor (SET)/MOS hybrid architectures greatly simplify the design of traditional A/D converters, but are quite unreliable due to random background charges. We propose a method of implementing Boltzmann machine networks on hybrid ADCs for the improved immunity against background charges. The self-regulation with Boltzmann machines enables the digital outputs of ADC to converge to a stable state when a simulated annealing process is applied. Simulation results with a 3-bit ADC are provided to show the effectiveness of the proposed structure. A possible structure for the higher resolution of ADCs is also presented.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improving the immunity of SET/MOS hybrid A/D converters using Boltzmann machine networks\",\"authors\":\"Zihan Zhang, Chunhong Chen\",\"doi\":\"10.1109/NANO.2017.8117259\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-electron-transistor (SET)/MOS hybrid architectures greatly simplify the design of traditional A/D converters, but are quite unreliable due to random background charges. We propose a method of implementing Boltzmann machine networks on hybrid ADCs for the improved immunity against background charges. The self-regulation with Boltzmann machines enables the digital outputs of ADC to converge to a stable state when a simulated annealing process is applied. Simulation results with a 3-bit ADC are provided to show the effectiveness of the proposed structure. A possible structure for the higher resolution of ADCs is also presented.\",\"PeriodicalId\":292399,\"journal\":{\"name\":\"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2017.8117259\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2017.8117259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improving the immunity of SET/MOS hybrid A/D converters using Boltzmann machine networks
Single-electron-transistor (SET)/MOS hybrid architectures greatly simplify the design of traditional A/D converters, but are quite unreliable due to random background charges. We propose a method of implementing Boltzmann machine networks on hybrid ADCs for the improved immunity against background charges. The self-regulation with Boltzmann machines enables the digital outputs of ADC to converge to a stable state when a simulated annealing process is applied. Simulation results with a 3-bit ADC are provided to show the effectiveness of the proposed structure. A possible structure for the higher resolution of ADCs is also presented.