低温集成电源管理装置的研制

A. R. Cabrera-Galicia, A. Ashok, P. Vliex, C. Degenhardt, A. Kruth, A. Artanov, S. van Waasen
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引用次数: 0

摘要

在低温下工作的集成电路(ic)有望开发由数千个物理量子比特(量子位)组成的可扩展量子计算系统。然而,由于这些集成电路需要不失真的电源线以获得最佳性能,因此开发能够低温操作的电源管理单元(pmu)也需要量子计算系统的可扩展性。为了开发这样的pmu,有必要了解其组件的低温电行为。因此,本文简要介绍了对商用22nm FDSOI IC技术的一些无源和有源元件进行探索性低温直流表征获得的测量结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Towards the Development of Cryogenic Integrated Power Management Units
Integrated Circuits (ICs) operating at cryogenic temperatures are expected to allow the development of scalable quantum computing systems consisting of thousands of physical quantum bits (qubits). However, since these ICs require undistorted power supply lines for optimal performance, the development of Power Management Units (PMUs) capable of cryogenic operation is also needed for the quantum computing systems scalability. To develop such PMUs, it is necessary to understand the cryogenic electrical behavior of its components. Therefore, this brief present the measurement results obtained from an exploratory cryogenic DC characterization of some of the passive and active components belonging to a commercial 22nm FDSOI IC technology.
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