H. Ohno, J. Barnard, C. Wood, L. Rathbun, L. Eastman
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引用次数: 5
摘要
MBE生长的薄层Al0.48In0.52As使单晶铝栅与有源沟道分离，也使有源沟道与半绝缘的InP衬底分离，从而提高了肖特基势垒高度，将电子限制在沟道内。在Vds= 2V和Vg= 0V条件下，栅极长度为0.6µm、栅极源间距为0.8µm的mesfet的栅极宽度平均为135 mS mm-1。一种集成光接收器由双栅DH GaInAs MESFET和两个槽型光导探测器串联组成，并显示出高速运行的潜力。
MESFETs with Ga0.47In0.53As active channel grown by MBE on InP substrates were successfully fabricated Thin layers of MBE grown Al0.48In0.52As separated both the single crystal aluminum gate from the active channel and the active channel from the semi-insulating InP substrate so raising the Schottky barrier height and confining the electrons to the channel. The MESFETs with 0.6 µm long gates and gate-to-source separations of 0.8 µm exhibited an average gmof 135 mS mm-1of gate width for Vds= 2V and Vg= 0V. An integrated photoreceiver comprising a dual gate DH GaInAs MESFET and two notch-type photoconductive detectors in series has been fabricated and shows potential for high speed operation.
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