R. Hauffe, U. Siebel, K. Petermann, R. Moosburger, J. Kropp, F. Arndt
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The self aligned mounting of the chip is achieved by a V-shaped rib-groove combination created by wet chemical etching, where the rib is the exact negative of the groove so that the flip chip is put on precisely defined crystal planes rather than on sensitive edges. The second approach utilizes the same chip for waveguides and fiber alignment structures which makes it possible to define both in the same lithographic step and thereby eliminating any vertical displacement. Processing difficulties arise primarily from completely different processing requirements of fiber aligning V-grooves and integrated waveguides. The need to define patterns of the size of only several /spl mu/m in the proximity to deep grooves makes the use of an electrophoretic photoresist necessary. Both processes allow for fiber chip alignment precisions in the sub-/spl mu/m range which was also experimentally verified with coupling losses as low as 0.7 dB per end-face. 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In both cases the waveguides are based on the oversized rib waveguide concept and utilize silicon as a substrate. Two possible fabrication processes for this passive fiber chip coupling IN or ON silicon are presented and compared. The first approach involves a technology similar to flip chip fabrication using a sub- and superstrate, that allows a separate processing of V-grooves for fiber alignment and the integrated optical devices. The self aligned mounting of the chip is achieved by a V-shaped rib-groove combination created by wet chemical etching, where the rib is the exact negative of the groove so that the flip chip is put on precisely defined crystal planes rather than on sensitive edges. The second approach utilizes the same chip for waveguides and fiber alignment structures which makes it possible to define both in the same lithographic step and thereby eliminating any vertical displacement. 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引用次数: 56
摘要
一种将单模光纤与集成光器件进行高精度无源耦合的有用技术对于成本效益封装至关重要,特别是在多端口器件如交换机和其他WDM组件中。这些装置是在两种不同的材料基础上制造的,SOI和聚合物。在这两种情况下,波导都是基于超大肋波导的概念,并利用硅作为衬底。提出并比较了两种可能的无源光纤芯片耦合IN或ON硅的制造工艺。第一种方法涉及一种类似于倒装芯片制造的技术,使用子层和上层,允许对光纤对准和集成光学器件的v型槽进行单独处理。芯片的自对准安装是通过湿化学蚀刻产生的v形肋槽组合来实现的,其中肋是槽的确切负向,因此倒装芯片被放置在精确定义的晶体平面上,而不是在敏感边缘上。第二种方法利用波导和光纤对准结构的相同芯片,这使得在相同的光刻步骤中定义两者成为可能,从而消除任何垂直位移。加工困难主要是由于光纤对准v型槽和集成波导的加工要求完全不同。由于需要在深沟槽附近定义尺寸仅为几/spl μ m的图案,因此必须使用电泳光刻胶。这两种工艺都允许光纤芯片对准精度在亚/spl μ m /m范围内,并且在每个端面的耦合损耗低至0.7 dB的情况下也得到了实验验证。介绍了其制备工艺及实验和理论结果。
Methods for passive fiber chip coupling of integrated optical devices
A useful technique for high precision passive coupling of single mode optical fibres to integrated optical devices is crucial for cost effective packaging especially in multiport devices like switches and other WDM components. These devices were fabricated on two different material bases, SOI and polymers. In both cases the waveguides are based on the oversized rib waveguide concept and utilize silicon as a substrate. Two possible fabrication processes for this passive fiber chip coupling IN or ON silicon are presented and compared. The first approach involves a technology similar to flip chip fabrication using a sub- and superstrate, that allows a separate processing of V-grooves for fiber alignment and the integrated optical devices. The self aligned mounting of the chip is achieved by a V-shaped rib-groove combination created by wet chemical etching, where the rib is the exact negative of the groove so that the flip chip is put on precisely defined crystal planes rather than on sensitive edges. The second approach utilizes the same chip for waveguides and fiber alignment structures which makes it possible to define both in the same lithographic step and thereby eliminating any vertical displacement. Processing difficulties arise primarily from completely different processing requirements of fiber aligning V-grooves and integrated waveguides. The need to define patterns of the size of only several /spl mu/m in the proximity to deep grooves makes the use of an electrophoretic photoresist necessary. Both processes allow for fiber chip alignment precisions in the sub-/spl mu/m range which was also experimentally verified with coupling losses as low as 0.7 dB per end-face. The fabrication processes along with experimental and theoretical results are presented.