J. Martín-Martínez, A. Crespo-Yepes, R. Rodríguez, M. Nafría, C. G. Almudever, A. Rubio
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memFET: From gate dielectric breakdown to system reconfigurability
In this paper, a new device concept, called hereafter memFET, is presented. The memFET exploits in MOSFETs the reversibility property of the dielectric breakdown (BD) in some materials, so that the potential device functionality is enlarged when compared to MIS/MIM structures. The memFET can be used to implement logic functions and memory blocks into a crossbar structure, allowing the dynamic logic configuration of the crossbar, opening paths to new adaptive computing hardware and fault-tolerant systems.
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