{"title":"具有同步差分v波段输出的单片集成150 GHz SiGe HBT推推式压控振荡器","authors":"Y. Baeyens, Y. Chen","doi":"10.1109/MWSYM.2003.1212509","DOIUrl":null,"url":null,"abstract":"A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13/spl mu/m SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"47","resultStr":"{\"title\":\"A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output\",\"authors\":\"Y. Baeyens, Y. Chen\",\"doi\":\"10.1109/MWSYM.2003.1212509\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13/spl mu/m SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"47\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1212509\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1212509","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output
A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13/spl mu/m SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.