Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors

This paper presents simulations of electron and hole gate currents in thin oxide tunneling MOS capacitors, based on a newly developed Monte Carlo code for Si-SiO Si stacks. Fully bipolar simulations with state of the art Si and SiO transport models predict a previously neglected population of cathode hot electrons proportional to that of the anode hot holes, often regarded as responsible of oxide degradation. The bias dependence of this population is discussed in view of recently reported results on the role of hole injection and transport in device degradation.