R. Fackenthal, P. Kwong, D. Mills, S. Sambandan, S. Sweha
{"title":"3.3 V 16mbit dram兼容快闪存储器","authors":"R. Fackenthal, P. Kwong, D. Mills, S. Sambandan, S. Sweha","doi":"10.1109/VLSIC.1995.520688","DOIUrl":null,"url":null,"abstract":"A new 16 Mb (1 Mbit/spl times/16) flash memory on a 0.6 /spl mu/m CMOS process has been designed, that combines the high-speed code execution capabilities of DRAM with nonvolatile, high-density, updatable code storage of flash memory, thus replacing the traditional redundant memory paradigm with one cost-effective solution. This solution eliminates the need to shadow code from nonvolatile memory to DRAM, thus enabling design of direct-execute code and mass storage memory systems, while the fully DRAM-compatible interface allows glueless design with existing DRAM controllers.","PeriodicalId":256846,"journal":{"name":"Digest of Technical Papers., Symposium on VLSI Circuits.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 3.3 V 16 Mbit DRAM-compatible flash memory\",\"authors\":\"R. Fackenthal, P. Kwong, D. Mills, S. Sambandan, S. Sweha\",\"doi\":\"10.1109/VLSIC.1995.520688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new 16 Mb (1 Mbit/spl times/16) flash memory on a 0.6 /spl mu/m CMOS process has been designed, that combines the high-speed code execution capabilities of DRAM with nonvolatile, high-density, updatable code storage of flash memory, thus replacing the traditional redundant memory paradigm with one cost-effective solution. This solution eliminates the need to shadow code from nonvolatile memory to DRAM, thus enabling design of direct-execute code and mass storage memory systems, while the fully DRAM-compatible interface allows glueless design with existing DRAM controllers.\",\"PeriodicalId\":256846,\"journal\":{\"name\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1995.520688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., Symposium on VLSI Circuits.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1995.520688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new 16 Mb (1 Mbit/spl times/16) flash memory on a 0.6 /spl mu/m CMOS process has been designed, that combines the high-speed code execution capabilities of DRAM with nonvolatile, high-density, updatable code storage of flash memory, thus replacing the traditional redundant memory paradigm with one cost-effective solution. This solution eliminates the need to shadow code from nonvolatile memory to DRAM, thus enabling design of direct-execute code and mass storage memory systems, while the fully DRAM-compatible interface allows glueless design with existing DRAM controllers.
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