翅片尺寸与高压退火对热载流子降解的相关性

2020 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2020-04-01 DOI:10.1109/IRPS45951.2020.9129584

A. Chasin, J. Franco, E. Bury, R. Ritzenthaler, E. Litta, A. Spessot, N. Horiguchi, D. Linten, B. Kaczer

{"title":"翅片尺寸与高压退火对热载流子降解的相关性","authors":"A. Chasin, J. Franco, E. Bury, R. Ritzenthaler, E. Litta, A. Spessot, N. Horiguchi, D. Linten, B. Kaczer","doi":"10.1109/IRPS45951.2020.9129584","DOIUrl":null,"url":null,"abstract":"In this work, we address two open issues of HotCarrier Degradation (HCD) on n-type FinFET devices. Firstly, the controversial impact of fin width is studied in terms of exact {VOV ,VD} stress conditions and taking in account the impact of external parasitic series resistance and Self-Heating Effects (SHE). Secondly, the impact of Hydrogen/Deuterium High-Pressure Anneal (HPA) on both time-0 and reliability is evaluated.","PeriodicalId":116002,"journal":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation\",\"authors\":\"A. Chasin, J. Franco, E. Bury, R. Ritzenthaler, E. Litta, A. Spessot, N. Horiguchi, D. Linten, B. Kaczer\",\"doi\":\"10.1109/IRPS45951.2020.9129584\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we address two open issues of HotCarrier Degradation (HCD) on n-type FinFET devices. Firstly, the controversial impact of fin width is studied in terms of exact {VOV ,VD} stress conditions and taking in account the impact of external parasitic series resistance and Self-Heating Effects (SHE). Secondly, the impact of Hydrogen/Deuterium High-Pressure Anneal (HPA) on both time-0 and reliability is evaluated.\",\"PeriodicalId\":116002,\"journal\":{\"name\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS45951.2020.9129584\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS45951.2020.9129584","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

在这项工作中，我们解决了n型FinFET器件上热载流子退化(HCD)的两个开放问题。首先，在精确{VOV,VD}应力条件下，考虑外部寄生串联电阻和自热效应(SHE)的影响，研究了有争议的翅片宽度的影响。其次，评估了氢/氘高压退火(HPA)对时间0和可靠性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation

In this work, we address two open issues of HotCarrier Degradation (HCD) on n-type FinFET devices. Firstly, the controversial impact of fin width is studied in terms of exact {VOV ,VD} stress conditions and taking in account the impact of external parasitic series resistance and Self-Heating Effects (SHE). Secondly, the impact of Hydrogen/Deuterium High-Pressure Anneal (HPA) on both time-0 and reliability is evaluated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE International Reliability Physics Symposium (IRPS)

自引率

0.00%

发文量