CMOS动态随机存取存储器中字行驱动电路的新概念

ESSCIRC '88: Fourteenth European Solid-State Circuits Conference Pub Date : 1988-09-01 DOI:10.1109/ESSCIRC.1988.5468473

W. Pribyl, J. Harter, W. Reczek, R. Strunz

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引用次数: 0

摘要

讨论了cmos - dram中用于字线驱动电路的nmos型电路。显示了相关的可靠性风险和电路设计问题。为了解决这些问题，本文提出了一种使用真正的CMOS电路作为字线驱动电路的新概念。仿真结果表明了显著的优势。在会议上介绍了在4兆DRAM上实现的测量结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New Concepts for Wordline Driving Circuits in CMOS Dynamic Random Access Memories

NMOS-type circuits for wordline driving circuits in CMOS-DRAMs are discussed. Associated reliability risks and circuit design problems are shown. As a solution to these problems, a new concept using true CMOS circuitry for wordline driving circuits is presented. Simulation results indicate significant advantages. Measurement results obtained from a realization on a 4 Megabit DRAM are presented at the conference.

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ESSCIRC '88: Fourteenth European Solid-State Circuits Conference

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