Ti膜厚度对后通道蚀刻非晶InGaZnO4薄膜晶体管的影响

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI:10.1109/EDSSC.2018.8487167

Letao Zhang, Xiaoliang Zhou, Hongyu He, Yang Shao, Shengdong Zhang

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引用次数: 0

摘要

采用Ti薄膜作为a- igzo的保护层，制备了反沟槽刻蚀(BCE)非晶InGaZnO4(a - igzo)薄膜晶体管。结果表明，最佳Ti厚度为4 ~ 5 nm，经过O2等离子体和退火处理后，a-IGZO得到了良好的保护，并获得了良好的传递曲线。此外，由于Ti层的引入，器件具有更好的应力稳定性。

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Ti Film Thickness Influences on the Back Channel Etched Amorphous InGaZnO4 Thin Film Transistors

Back channel etched (BCE) amorphous InGaZnO4(a–IGZO) thin film transistors are fabricated, in which Ti thin film is employed as a protective layer for a-IGZO. The optimal Ti thickness is found to be 4-5 nm, and a-IGZO will be well protected and excellent transfer curves can be obtained after O2 plasma and annealing treatment. Besides, by the introduction of the Ti layer, the devices obtain better stress stability.

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来源期刊

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

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