R. Abdelrassoul, M. Yakout, A. AbdelFattah, S.G. Essa
{"title":"模拟AlGaAs/GaAs hemt的跨导和电容电压特性","authors":"R. Abdelrassoul, M. Yakout, A. AbdelFattah, S.G. Essa","doi":"10.1109/NRSC.2002.1022657","DOIUrl":null,"url":null,"abstract":"A new simple and accurate analytical model for the transconductance-voltage and capacitance-voltage characteristics of AlGaAs/GaAs HEMT devices is presented. It is suitable for use in device simulation programs. The model is based on a simple formulation of the sheet carrier concentration in the two-dimensional electron gas (2-DEG) in the HEMT. The model takes into account the parasitic conduction in the AlGaAs. The model gives very good agreement with measured transconductance and capacitance characteristics for different HEMT devices.","PeriodicalId":231600,"journal":{"name":"Proceedings of the Nineteenth National Radio Science Conference","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling transconductance- and capacitance-voltage characteristics of AlGaAs/GaAs HEMTs\",\"authors\":\"R. Abdelrassoul, M. Yakout, A. AbdelFattah, S.G. Essa\",\"doi\":\"10.1109/NRSC.2002.1022657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new simple and accurate analytical model for the transconductance-voltage and capacitance-voltage characteristics of AlGaAs/GaAs HEMT devices is presented. It is suitable for use in device simulation programs. The model is based on a simple formulation of the sheet carrier concentration in the two-dimensional electron gas (2-DEG) in the HEMT. The model takes into account the parasitic conduction in the AlGaAs. The model gives very good agreement with measured transconductance and capacitance characteristics for different HEMT devices.\",\"PeriodicalId\":231600,\"journal\":{\"name\":\"Proceedings of the Nineteenth National Radio Science Conference\",\"volume\":\"122 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Nineteenth National Radio Science Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NRSC.2002.1022657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Nineteenth National Radio Science Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NRSC.2002.1022657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling transconductance- and capacitance-voltage characteristics of AlGaAs/GaAs HEMTs
A new simple and accurate analytical model for the transconductance-voltage and capacitance-voltage characteristics of AlGaAs/GaAs HEMT devices is presented. It is suitable for use in device simulation programs. The model is based on a simple formulation of the sheet carrier concentration in the two-dimensional electron gas (2-DEG) in the HEMT. The model takes into account the parasitic conduction in the AlGaAs. The model gives very good agreement with measured transconductance and capacitance characteristics for different HEMT devices.
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