Yanyu Jin, M. Sanduleanu, Eduardo Alarcon Rivero, J. Long
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A millimeter-wave power amplifier with 25dB power gain and +8dBm saturated output power
A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25 dB at 52 GHz and 10 dB at 60 GHz with a -3 dB bandwidth of 46-53 GHz. Saturated output power is +8 dBm with a PAE of 7%. The -1 dB compression point is 5 dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180times960 mum2 die consumes a total of 73 mA from a 1.5 V (plusmn10%) power supply.
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