快速热处理(RTP)应用于0.25 /spl mu/m工艺的离子注入退火

Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop Pub Date : 1995-11-13 DOI:10.1109/ASMC.1995.484327

S. D. Hossain, M. Paś, G. Miner, C. Cleavelin

{"title":"快速热处理(RTP)应用于0.25 /spl mu/m工艺的离子注入退火","authors":"S. D. Hossain, M. Paś, G. Miner, C. Cleavelin","doi":"10.1109/ASMC.1995.484327","DOIUrl":null,"url":null,"abstract":"The process and machine performance of an ion implantation anneal process performed using a Rapid Thermal Processing (RTP) system for 0.25 /spl mu/m technology are presented. As outlined in the 1994 Semiconductor Industry Association (SIA) National Technology Roadmap for Semiconductors, the 0.25 /spl mu/m devices will require junction depths of 50 to 120 nm and a surface concentration at channel of 1E18 atoms-cm/sup -3/. These requirements for junction depth and surface concentration can only be met by using an RTP for the ion implant anneal. This paper reviews the process performance of the anneal process in terms of sheet resistance, surface and bulk contamination. It also includes the results of an initial and final marathon to qualify the RTP for use in a manufacturing environment.","PeriodicalId":237741,"journal":{"name":"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Rapid thermal processing (RTP) applied to ion implant anneal for 0.25 /spl mu/m technology\",\"authors\":\"S. D. Hossain, M. Paś, G. Miner, C. Cleavelin\",\"doi\":\"10.1109/ASMC.1995.484327\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The process and machine performance of an ion implantation anneal process performed using a Rapid Thermal Processing (RTP) system for 0.25 /spl mu/m technology are presented. As outlined in the 1994 Semiconductor Industry Association (SIA) National Technology Roadmap for Semiconductors, the 0.25 /spl mu/m devices will require junction depths of 50 to 120 nm and a surface concentration at channel of 1E18 atoms-cm/sup -3/. These requirements for junction depth and surface concentration can only be met by using an RTP for the ion implant anneal. This paper reviews the process performance of the anneal process in terms of sheet resistance, surface and bulk contamination. It also includes the results of an initial and final marathon to qualify the RTP for use in a manufacturing environment.\",\"PeriodicalId\":237741,\"journal\":{\"name\":\"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.1995.484327\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1995.484327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

介绍了采用快速热处理(RTP)系统进行0.25 /spl mu/m工艺的离子注入退火工艺的工艺和机器性能。正如1994年半导体工业协会(SIA)国家半导体技术路线图所概述的那样，0.25 /spl mu/m器件将要求结深度为50至120 nm，通道表面浓度为1E18原子-cm/sup -3/。这些对结深度和表面浓度的要求只能通过使用RTP进行离子注入退火来满足。本文从板材阻力、表面污染和整体污染等方面综述了退火工艺的工艺性能。它还包括初始和最终马拉松的结果，以使RTP能够在制造环境中使用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Rapid thermal processing (RTP) applied to ion implant anneal for 0.25 /spl mu/m technology

The process and machine performance of an ion implantation anneal process performed using a Rapid Thermal Processing (RTP) system for 0.25 /spl mu/m technology are presented. As outlined in the 1994 Semiconductor Industry Association (SIA) National Technology Roadmap for Semiconductors, the 0.25 /spl mu/m devices will require junction depths of 50 to 120 nm and a surface concentration at channel of 1E18 atoms-cm/sup -3/. These requirements for junction depth and surface concentration can only be met by using an RTP for the ion implant anneal. This paper reviews the process performance of the anneal process in terms of sheet resistance, surface and bulk contamination. It also includes the results of an initial and final marathon to qualify the RTP for use in a manufacturing environment.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop

自引率

0.00%

发文量