DRAM单元结构与技术

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1987.1157163

A. Shah

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引用次数: 0

摘要

在过去的几年中，已经提出了十几种不同的单元结构和技术来减小DRAM单元的尺寸。每个建议都代表了过程复杂性、单元大小和单元性能之间的权衡。本小组将尝试找出这些竞争方法的优点和缺点，并试图了解下一代dram的电池结构和技术趋势。

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DRAM cell structures and technologies

Over a dozen different cell structures and technologies have been proposed in the past few years to reduce DRAM cell size. Each of the proposals represents a tradeoff between process complexity, cell size and cell perfarmance. This panel will attempt to identify the advantages and disadvantages of these competing approaches and try to understand the trend in cell structures and technologies for the next generation of DRAMs.

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1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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