一种新型超高压4H-SiC双极器件:MAGBT

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240033

K. Asano, Y. Sugawara, K. Nakayama

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引用次数: 0

摘要

提出了一种新型的常关SiC MOS积累沟道栅双极晶体管，称为MAGBT，具有高阻断电压，用于高压应用。该MAGBT有望实现高阻塞电压和低导通电压降。即使阻断电压大于20kv，在100a /cm/sup 2/下的导通电压降也可以小于6.5 V。此外，高安全性闩锁可以预期。

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A novel ultra high voltage 4H-SiC bipolar device: MAGBT

A novel normally-off SiC MOS accumulated channel gate bipolar transistor, called MAGBT, with a high blocking voltage is proposed for high voltage applications. This MAGBT can be expected to realize a high blocking voltage and a low on-state voltage drop. Even if the blocking voltage is greater than 20 kV, the on-state voltage drop at 100 A/cm/sup 2/ can be expected to be less than 6.5 V. Furthermore, high safety against latch up can be expected.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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