Yiping Zhang, Ziou Wang, Canyan Zhu, Lijun Zhang, Aiming Ji, L. Mao
{"title":"28nm锁存式感测放大器耦合效应分析","authors":"Yiping Zhang, Ziou Wang, Canyan Zhu, Lijun Zhang, Aiming Ji, L. Mao","doi":"10.1109/ISICIR.2016.7829751","DOIUrl":null,"url":null,"abstract":"With development of semiconductor fabrication technology, channel length of CMOS device and device pitch scale down accompanied by more severe process variation and signal coupling effect. In this paper, we focus on the decouple latch type voltage sense amplifier which is widely used in SRAM product. Two main signal coupling effects are introduced and analyzed, and improved design is suggested","PeriodicalId":159343,"journal":{"name":"2016 International Symposium on Integrated Circuits (ISIC)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"28nm latch type sense amplifier coupling effect analysis\",\"authors\":\"Yiping Zhang, Ziou Wang, Canyan Zhu, Lijun Zhang, Aiming Ji, L. Mao\",\"doi\":\"10.1109/ISICIR.2016.7829751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With development of semiconductor fabrication technology, channel length of CMOS device and device pitch scale down accompanied by more severe process variation and signal coupling effect. In this paper, we focus on the decouple latch type voltage sense amplifier which is widely used in SRAM product. Two main signal coupling effects are introduced and analyzed, and improved design is suggested\",\"PeriodicalId\":159343,\"journal\":{\"name\":\"2016 International Symposium on Integrated Circuits (ISIC)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on Integrated Circuits (ISIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISICIR.2016.7829751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on Integrated Circuits (ISIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISICIR.2016.7829751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
28nm latch type sense amplifier coupling effect analysis
With development of semiconductor fabrication technology, channel length of CMOS device and device pitch scale down accompanied by more severe process variation and signal coupling effect. In this paper, we focus on the decouple latch type voltage sense amplifier which is widely used in SRAM product. Two main signal coupling effects are introduced and analyzed, and improved design is suggested