28nm锁存式感测放大器耦合效应分析

Yiping Zhang, Ziou Wang, Canyan Zhu, Lijun Zhang, Aiming Ji, L. Mao
{"title":"28nm锁存式感测放大器耦合效应分析","authors":"Yiping Zhang, Ziou Wang, Canyan Zhu, Lijun Zhang, Aiming Ji, L. Mao","doi":"10.1109/ISICIR.2016.7829751","DOIUrl":null,"url":null,"abstract":"With development of semiconductor fabrication technology, channel length of CMOS device and device pitch scale down accompanied by more severe process variation and signal coupling effect. In this paper, we focus on the decouple latch type voltage sense amplifier which is widely used in SRAM product. Two main signal coupling effects are introduced and analyzed, and improved design is suggested","PeriodicalId":159343,"journal":{"name":"2016 International Symposium on Integrated Circuits (ISIC)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"28nm latch type sense amplifier coupling effect analysis\",\"authors\":\"Yiping Zhang, Ziou Wang, Canyan Zhu, Lijun Zhang, Aiming Ji, L. Mao\",\"doi\":\"10.1109/ISICIR.2016.7829751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With development of semiconductor fabrication technology, channel length of CMOS device and device pitch scale down accompanied by more severe process variation and signal coupling effect. In this paper, we focus on the decouple latch type voltage sense amplifier which is widely used in SRAM product. Two main signal coupling effects are introduced and analyzed, and improved design is suggested\",\"PeriodicalId\":159343,\"journal\":{\"name\":\"2016 International Symposium on Integrated Circuits (ISIC)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on Integrated Circuits (ISIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISICIR.2016.7829751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on Integrated Circuits (ISIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISICIR.2016.7829751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

随着半导体制造技术的发展,CMOS器件的通道长度和器件间距缩小,伴随着更严重的工艺变化和信号耦合效应。本文重点研究了在SRAM产品中广泛应用的解耦锁存式电压检测放大器。介绍和分析了两种主要的信号耦合效应,并提出了改进设计方案
本文章由计算机程序翻译,如有差异,请以英文原文为准。
28nm latch type sense amplifier coupling effect analysis
With development of semiconductor fabrication technology, channel length of CMOS device and device pitch scale down accompanied by more severe process variation and signal coupling effect. In this paper, we focus on the decouple latch type voltage sense amplifier which is widely used in SRAM product. Two main signal coupling effects are introduced and analyzed, and improved design is suggested
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信