在光刻上感应金属填充插入

Vikram B. Suresh, P. Vijayakumar, S. Kundu
{"title":"在光刻上感应金属填充插入","authors":"Vikram B. Suresh, P. Vijayakumar, S. Kundu","doi":"10.1109/ISQED.2012.6187495","DOIUrl":null,"url":null,"abstract":"Manufacturability and lithographic printability are growing concerns with advancing technology nodes. The two most important parameters which influence the printability of a design are lithographic process corner and pattern density of the design. Dummy metal-fills are used to improve post-chemical mechanical polishing surface planarity. Conventional metal-fills do not consider impact of fill on lithographic printability or critical area-this is the focus of our paper. Although systematic yield due to lithographic distortions is gaining prominence, paniculate defects still remain a significant source of yield loss. Increasing design density in conjunction with growing manufacturability issues necessitates lithography aware paniculate limited yield loss analysis. In this work, we propose a novel lithography aware metal-fill insertion technique taking both statistical lithographic variations and critical area into consideration. Specifically, the main contributions of this work are a) analyzing the influence of metal-fills on line width variation and critical area, b) synthesis of variational lithography-aware metal-fill to improve design yield. The solution is been built on existing commercial tools. Experiments on ISCAS'85 benchmark circuits reveal that in 45nm technology, metal-fills worsen the linewidth variation by as much as 15% for more than 30% of nets compared to no fill. By contrast, proposed lithography aware metal-fill reduces linewidth variation by -25% and critical area by -35% compared to conventional metal-fill solutions without sacrificing density, planarity and performance targets.","PeriodicalId":205874,"journal":{"name":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"On lithography aware metal-fill insertion\",\"authors\":\"Vikram B. Suresh, P. Vijayakumar, S. Kundu\",\"doi\":\"10.1109/ISQED.2012.6187495\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Manufacturability and lithographic printability are growing concerns with advancing technology nodes. The two most important parameters which influence the printability of a design are lithographic process corner and pattern density of the design. Dummy metal-fills are used to improve post-chemical mechanical polishing surface planarity. Conventional metal-fills do not consider impact of fill on lithographic printability or critical area-this is the focus of our paper. Although systematic yield due to lithographic distortions is gaining prominence, paniculate defects still remain a significant source of yield loss. Increasing design density in conjunction with growing manufacturability issues necessitates lithography aware paniculate limited yield loss analysis. In this work, we propose a novel lithography aware metal-fill insertion technique taking both statistical lithographic variations and critical area into consideration. Specifically, the main contributions of this work are a) analyzing the influence of metal-fills on line width variation and critical area, b) synthesis of variational lithography-aware metal-fill to improve design yield. The solution is been built on existing commercial tools. Experiments on ISCAS'85 benchmark circuits reveal that in 45nm technology, metal-fills worsen the linewidth variation by as much as 15% for more than 30% of nets compared to no fill. By contrast, proposed lithography aware metal-fill reduces linewidth variation by -25% and critical area by -35% compared to conventional metal-fill solutions without sacrificing density, planarity and performance targets.\",\"PeriodicalId\":205874,\"journal\":{\"name\":\"Thirteenth International Symposium on Quality Electronic Design (ISQED)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thirteenth International Symposium on Quality Electronic Design (ISQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2012.6187495\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2012.6187495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

随着技术的发展,可制造性和平版印刷性日益受到关注。影响设计可印刷性的两个最重要的参数是光刻工艺角和设计的图案密度。采用假金属填料提高化学后机械抛光表面的平面度。传统的金属填料没有考虑填料对平版印刷适性或关键区域的影响,这是本文的重点。虽然由于光刻变形引起的系统良率越来越突出,但细纹缺陷仍然是良率损失的重要来源。不断增加的设计密度与日益增长的可制造性问题相结合,需要光刻意识和有限的良率损失分析。在这项工作中,我们提出了一种新的光刻感知金属填充插入技术,同时考虑了统计光刻变化和临界区域。具体来说,本工作的主要贡献是a)分析金属填充对线宽变化和临界区域的影响,b)合成可变光刻感知金属填充以提高设计成品率。该解决方案是基于现有的商业工具构建的。在ISCAS’85基准电路上的实验表明,在45nm技术中,与没有填充相比,金属填充使超过30%的网的线宽变化恶化了15%。相比之下,与传统的金属填充解决方案相比,在不牺牲密度、平面度和性能目标的情况下,所提出的光刻感应金属填充将线宽变化减少了-25%,临界面积减少了-35%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On lithography aware metal-fill insertion
Manufacturability and lithographic printability are growing concerns with advancing technology nodes. The two most important parameters which influence the printability of a design are lithographic process corner and pattern density of the design. Dummy metal-fills are used to improve post-chemical mechanical polishing surface planarity. Conventional metal-fills do not consider impact of fill on lithographic printability or critical area-this is the focus of our paper. Although systematic yield due to lithographic distortions is gaining prominence, paniculate defects still remain a significant source of yield loss. Increasing design density in conjunction with growing manufacturability issues necessitates lithography aware paniculate limited yield loss analysis. In this work, we propose a novel lithography aware metal-fill insertion technique taking both statistical lithographic variations and critical area into consideration. Specifically, the main contributions of this work are a) analyzing the influence of metal-fills on line width variation and critical area, b) synthesis of variational lithography-aware metal-fill to improve design yield. The solution is been built on existing commercial tools. Experiments on ISCAS'85 benchmark circuits reveal that in 45nm technology, metal-fills worsen the linewidth variation by as much as 15% for more than 30% of nets compared to no fill. By contrast, proposed lithography aware metal-fill reduces linewidth variation by -25% and critical area by -35% compared to conventional metal-fill solutions without sacrificing density, planarity and performance targets.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信