{"title":"对称和非对称驱动微结构的拉入及其在直流电压参考中的应用","authors":"L. Rocha, E. Cretu, R. Wolffenbuttel","doi":"10.1109/IMTC.2002.1006937","DOIUrl":null,"url":null,"abstract":"Micromechanical structures have been designed, fabricated in silicon and tested for use as on-chip voltage reference Applications are in electrical metrology and in integrated silicon Microsystems. Microbeams of 100 /spl mu/m length, 3 /spl mu/m width and 11 /spl mu/m thickness are electrostatically actuated with a very reproducible pull-in voltage. The structure can be either symmetrically or asymmetrically actuated, resulting in different pull-in voltages, as well as different operational specifications e.g. hysteresis and reproducibility. A two dimensional energy-based analytical model for the static pull-in is derived for both actuation types and compared with measurements. Devices have been designed and fabricated in an epi-poly process. Measurements show a pull-in voltage in the 9.1-9.5 V range for the asymmetric case and 10.5-11 V range for the symmetric case, both in agreement with modeling.","PeriodicalId":141111,"journal":{"name":"IMTC/2002. Proceedings of the 19th IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.00CH37276)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"The pull-in of symmetrically and asymmetrically driven microstructures and the use in DC voltage references\",\"authors\":\"L. Rocha, E. Cretu, R. Wolffenbuttel\",\"doi\":\"10.1109/IMTC.2002.1006937\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Micromechanical structures have been designed, fabricated in silicon and tested for use as on-chip voltage reference Applications are in electrical metrology and in integrated silicon Microsystems. Microbeams of 100 /spl mu/m length, 3 /spl mu/m width and 11 /spl mu/m thickness are electrostatically actuated with a very reproducible pull-in voltage. The structure can be either symmetrically or asymmetrically actuated, resulting in different pull-in voltages, as well as different operational specifications e.g. hysteresis and reproducibility. A two dimensional energy-based analytical model for the static pull-in is derived for both actuation types and compared with measurements. Devices have been designed and fabricated in an epi-poly process. Measurements show a pull-in voltage in the 9.1-9.5 V range for the asymmetric case and 10.5-11 V range for the symmetric case, both in agreement with modeling.\",\"PeriodicalId\":141111,\"journal\":{\"name\":\"IMTC/2002. Proceedings of the 19th IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.00CH37276)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IMTC/2002. Proceedings of the 19th IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.00CH37276)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMTC.2002.1006937\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IMTC/2002. Proceedings of the 19th IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.00CH37276)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.2002.1006937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The pull-in of symmetrically and asymmetrically driven microstructures and the use in DC voltage references
Micromechanical structures have been designed, fabricated in silicon and tested for use as on-chip voltage reference Applications are in electrical metrology and in integrated silicon Microsystems. Microbeams of 100 /spl mu/m length, 3 /spl mu/m width and 11 /spl mu/m thickness are electrostatically actuated with a very reproducible pull-in voltage. The structure can be either symmetrically or asymmetrically actuated, resulting in different pull-in voltages, as well as different operational specifications e.g. hysteresis and reproducibility. A two dimensional energy-based analytical model for the static pull-in is derived for both actuation types and compared with measurements. Devices have been designed and fabricated in an epi-poly process. Measurements show a pull-in voltage in the 9.1-9.5 V range for the asymmetric case and 10.5-11 V range for the symmetric case, both in agreement with modeling.