改变溅射环境和退火气体以优化HfLaO栅极介质MOS电容器的电学性能

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2010-12-01 DOI:10.1109/EDSSC.2010.5713772

Q. Tao, P. Lai

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引用次数: 0

摘要

通过改变Ar与O2的比例，研究了溅射环境对HfLaO薄膜性能的影响。为了优化电学性能，HfLaO薄膜在N2、NO或NH3中退火，并基于Si MOS电容器进行评价。结果表明，溅射过程中适当的Ar与O2配比可以提高薄膜的介电常数，而NH3退火可以改善薄膜的性能。

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Varying sputtering ambient and annealing gas to optimize the electrical properties of MOS capacitor with HfLaO gate dielectric

The impact of sputtering ambient on the properties of HfLaO film is studied by varying the ratio of Ar to O2. In order to optimize the electrical performances, the HfLaO film is then annealed in N2, NO or NH3 and evaluated based on Si MOS capacitors. As a result, appropriate ratio of Ar to O2 during sputtering can increase the permittivity of film while the NH3 annealing can improve its properties.

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2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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