一个40-nV/VHz 0.0145-mm2传感器读出电路,在40-nm CMOS中基于斩波vco的CTDSM

Chih-Chan Tu, Yu-Kai Wang, Tsung-Hsien Lin
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引用次数: 1

摘要

介绍了一种基于斩波vco的CTDSM传感器读出电路。这款基于vco的ADC可直接连接到传感器,以消除前置放大器。该VCO设计为Gm- cco,即Gm级与折叠级联电流控制振荡器级联。所提出的电路保证了高输入阻抗。此外,主要的噪声和偏移贡献,Gm阶段,是通过斩波操作减轻。基于vco的CTDSM在40纳米CMOS中实现。整个电路从1.2 v电源中抽取14 μA。在2.4 mvpp的输入下,它在5 khz BW上实现49.43 dB的SNDR, SFDR为59.5 dB。输入参考噪声为40nV/√Hz。芯片面积仅为0.0145 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 40-nV/VHz 0.0145-mm2 sensor readout circuit with chopped VCO-based CTDSM in 40-nm CMOS
A sensor readout circuit employing chopped VCO-based CTDSM is presented in this paper. This VCO-based ADC features direct connection to the sensors to eliminate pre-amplifier. The VCO is designed as a Gm-CCO, which is a Gm stage cascaded with the folded-cascode current-controlled oscillator. The proposed circuit ensures a high input impedance. Furthermore, the main noise and offset contributor, the Gm stage, is mitigated by chopping operation. The VCO-based CTDSM is implemented in 40-nm CMOS. The whole circuit draws 14 μA from 1.2-V supply. With a 2.4-mVpp input, it achieves 49.43 dB SNDR over 5-kHz BW and has SFDR of 59.5 dB. The input-referred noise is 40nV/√Hz. The chip area is only 0.0145 mm2.
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