用电导深能级瞬态光谱研究硅衬底上AlGaN/GaN HEMTs的深能级

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI:10.1109/DTIS.2010.5487570

H. Mosbahi, M. Gassoumi, M. Charfeddine, C. Gaquière, M. A. Zaidi, H. Maaref

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引用次数: 1

摘要

我们报道了用分子束外延在硅上生长的AlGaN/GaN hemt中的电子陷阱。利用漏极脉冲下的电导深能级瞬态光谱(CDLTS)进行了深能级分析。CDLTS测量揭示了三个能级分别为0.11、0.17和0.22 eV的陷阱。

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Investigation of deep levels in AlGaN/GaN HEMTs on silicon substrate by conductance deep level transient spectroscopy

We report investigation of electron traps in AlGaN/GaN HEMTs, grown on silicon by molecular beam epitaxy. Deep levels analysis was performed by conductance deep level transient spectroscopy (CDLTS) under a drain pulse. CDLTS measurements reveal three traps with the energy levels of 0.11, 0.17 and 0.22 eV.

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5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era

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