基于S-CPS的差动电感BiCMOS 55nm技术,用于回程应用的81-86 GHz压控振荡器

Ekta Sharma, Alfredo Bautista, E. Pistono, P. Ferrari, S. Bourdel
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引用次数: 2

摘要

本文介绍了一种用于回程的毫米波压控振荡器的设计。该VCO工作在81-86 GHz之间,采用BiCMOS 55纳米技术设计。这项创新与使用慢波共面带(S-CPS)作为差动电感有关。由于S-CPS的高品质因数(≈33),提高了相位噪声和功耗。并与传统的压控振荡器(基于集总电感和变容管)进行了比较。基于S-CPS的VCO相位噪声降低3 dB,功耗更低,在10 MHz偏移时相位噪声为-111 dBc/Hz,功耗为6.84 mW。1.2 V电源,调谐范围达到7.9%,这是足够的目标应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
81–86 GHz VCO for Backhaul application with S-CPS based differential inductor in BiCMOS 55nm technology
This paper presents the design of a mm-wave VCO for Backhaul applications. This VCO operates between 81-86 GHz and was designed in the BiCMOS 55 nm technology. The innovation is linked to the use of a slow-wave coplanar strip (S-CPS) as a differential inductor. Thanks to high quality factor (≈ 33) of S-CPS, the phase noise and power consumption are improved. The proposed VCO is compared to the classical VCO (lumped inductor and varactor based). The S-CPS based VCO exhibits 3 dB less phase noise, and lower power consumption, with a phase noise of -111 dBc/Hz at 10 MHz offset and a power consumption of 6.84 mW. With 1.2 V supply, the tuning range reaches 7.9%, which is enough for the targeted application.
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