1.9 GHz 1.05V 16位RISC内核,采用28nm技术实现高密度低功耗运行

D. Babayan, E. Babayan, P. Petrosyan, A. Tumanyan, E. Kagramanyan, Tigran Hakhverdyan
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引用次数: 1

摘要

当前,随着便携式设备的广泛使用,采用功率门控、多电压等不同的低功耗技术进行集成电路的低功耗设计变得越来越重要。大多数这些技术依赖于不同区域和IC块的不同供电方案,以降低动态和/或静态(泄漏)功率。因此,这些技术主要适用于片上系统(soc)及其组件,如模拟ip和数字核心。本文介绍了在简单的RISC内核上实现的面积和功耗优化方法,并准备集成到SoC中。本文提出的方法结合了几种低功耗技术来实现定制开发的RISC内核的预期结果。结果显示显著的功耗降低和可接受的高性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
1.9 GHz 1.05V 16-bit RISC core for high density and low power operation in 28nm technology
Currently the advancement in widespread use of portable devices significantly increases importance of low power design of ICs using different low power techniques, such as power gating, multi voltage etc. Most of these techniques rely on different supply schemes for different areas and blocks of an IC to reduce dynamic and/or static (leakage) power. Thus these techniques are mostly applicable to Systems-On-Chip (SoCs) and their components, such as analog IPs and digital cores. This paper presents area and power optimization approach implemented on simple RISC core ready to be integrated into SoC. Proposed approach uses combination of several low power techniques to achieve desired result for custom-developed RISC core. Results present significant power reduction with acceptable high performance.
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