先进商用CMOS技术对空间和医疗应用的兴趣日益浓厚。一种新型纳米功率和辐射硬化SRAM在130nm CMOS上的图示

P. Roche, Mark Lysinger, G. Gasiot, J. Daveau, M. Zamanian, P. Dautriche
{"title":"先进商用CMOS技术对空间和医疗应用的兴趣日益浓厚。一种新型纳米功率和辐射硬化SRAM在130nm CMOS上的图示","authors":"P. Roche, Mark Lysinger, G. Gasiot, J. Daveau, M. Zamanian, P. Dautriche","doi":"10.1109/IOLTS.2008.60","DOIUrl":null,"url":null,"abstract":"This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed in 130 nm CMOS.","PeriodicalId":261786,"journal":{"name":"2008 14th IEEE International On-Line Testing Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Growing Interest of Advanced Commercial CMOS Technologies for Space and Medical Applications. Illustration with a New Nano-Power and Radiation-Hardened SRAM in 130nm CMOS\",\"authors\":\"P. Roche, Mark Lysinger, G. Gasiot, J. Daveau, M. Zamanian, P. Dautriche\",\"doi\":\"10.1109/IOLTS.2008.60\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed in 130 nm CMOS.\",\"PeriodicalId\":261786,\"journal\":{\"name\":\"2008 14th IEEE International On-Line Testing Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 14th IEEE International On-Line Testing Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IOLTS.2008.60\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 14th IEEE International On-Line Testing Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2008.60","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文综述了最近的实验证实,商用CMOS技术的固有辐射鲁棒性随着尺寸的减小而自然提高。当另外使用创新的设计技术时,现在可以确保性能和辐射硬度都得到满足。以130 nm CMOS设计的原始纳米功率和抗辐射8mb SRAM为例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growing Interest of Advanced Commercial CMOS Technologies for Space and Medical Applications. Illustration with a New Nano-Power and Radiation-Hardened SRAM in 130nm CMOS
This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed in 130 nm CMOS.
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