静水压力和磁场对非均匀量子点供体的同时影响

M. El Haouari, E. Feddi, A. Oukerroum, And E. Assaid
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引用次数: 0

摘要

本文研究了静水压力和磁场对非均匀量子点gaalas - gaas - gaas - gaalas中浅层供体结合能和磁化率抗磁性的影响。我们的计算是在质量有效近似内使用变分方法进行的。我们用无限深势来描述量子约束。计算了供体的基态能和抗磁化率随静液压力、点尺寸、供体位置和磁场强度的变化。结果表明,基态能量随压力和磁场的增大而增大,且随内半径和外半径的增大而增大。抗磁化率绝对值随压力和磁场的增大而减小。静水压力和磁场对应一个附加约束,它们的作用在最低约束下减弱。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The simultaneous effects of the hydrostatic pressure and magnetic field on the donor confined in inhomogeneous quantum dots
In the present work, we studied the effects of hydrostatic pressure and the magnetic field on the binding energy and susceptibility diamagnetic of the shallow donor confined in inhomogeneous quantum dots GaAlAs-GaAs-GaAlAs. Our calculations are performed using a variational approach within the mass effective approximation. We describe the quantum confinement by an infinite deep potential. The ground state energy and the diamagnetic susceptibility of the donor are computed as function of hydrostatic pressure, dot size, donor position and the strength of the magnetic field. The results show the ground state energy, increases with pressure and magnetic field for any ratio, inner on outer radius. The absolute value of diamagnetic susceptibility decreases with increasing pressure and magnetic field. Hydrostatic pressure and magnetic field corresponds an additional confinement, their effects are decerned at lowest confinement.
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