MCM互连的传输线分析

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93) Pub Date : 1993-06-01 DOI:10.1109/ECTC.1993.346726

E. Beyne, J. Peeters

{"title":"MCM互连的传输线分析","authors":"E. Beyne, J. Peeters","doi":"10.1109/ECTC.1993.346726","DOIUrl":null,"url":null,"abstract":"The transmission line behavior of MCM-D interconnection lines is discussed with particular emphasis on the frequency dependent loss and delay characteristics. A broadband model covering the frequency spectrum from DC to RF is proposed. The applicability of this model is experimentally verified by comparison with measured S-parameters from 45 MHz to 18 GHz on test structures realized with two different MCM-D technologies. The broadband model is integrated in the time-domain network simulator TRANSPLUS. This program was developed for the simulation of the interconnection circuitry between chips, it thus includes models for the output circuits of the chips, the packaging, and the (coupled) interconnection lines. Simulations of different MCM-D interconnections between CMOS and bipolar chips are discussed.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transmission line analysis of MCM interconnects\",\"authors\":\"E. Beyne, J. Peeters\",\"doi\":\"10.1109/ECTC.1993.346726\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The transmission line behavior of MCM-D interconnection lines is discussed with particular emphasis on the frequency dependent loss and delay characteristics. A broadband model covering the frequency spectrum from DC to RF is proposed. The applicability of this model is experimentally verified by comparison with measured S-parameters from 45 MHz to 18 GHz on test structures realized with two different MCM-D technologies. The broadband model is integrated in the time-domain network simulator TRANSPLUS. This program was developed for the simulation of the interconnection circuitry between chips, it thus includes models for the output circuits of the chips, the packaging, and the (coupled) interconnection lines. Simulations of different MCM-D interconnections between CMOS and bipolar chips are discussed.<<ETX>>\",\"PeriodicalId\":281423,\"journal\":{\"name\":\"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.1993.346726\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1993.346726","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

讨论了MCM-D互连线的传输线特性，特别强调了频率相关损耗和延迟特性。提出了一种覆盖直流到射频频谱的宽带模型。通过在两种不同MCM-D技术实现的测试结构上与45 MHz ~ 18 GHz范围内实测s参数的比较，验证了该模型的适用性。该宽带模型集成在时域网络模拟器TRANSPLUS中。该程序是为模拟芯片之间的互连电路而开发的，因此它包括芯片的输出电路、封装和(耦合)互连线的模型。讨论了CMOS和双极芯片之间不同的MCM-D互连的仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Transmission line analysis of MCM interconnects

The transmission line behavior of MCM-D interconnection lines is discussed with particular emphasis on the frequency dependent loss and delay characteristics. A broadband model covering the frequency spectrum from DC to RF is proposed. The applicability of this model is experimentally verified by comparison with measured S-parameters from 45 MHz to 18 GHz on test structures realized with two different MCM-D technologies. The broadband model is integrated in the time-domain network simulator TRANSPLUS. This program was developed for the simulation of the interconnection circuitry between chips, it thus includes models for the output circuits of the chips, the packaging, and the (coupled) interconnection lines. Simulations of different MCM-D interconnections between CMOS and bipolar chips are discussed.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)

自引率

0.00%

发文量