{"title":"一种基于CMOS的宽带高线性射频接收机前端","authors":"V. Arkesteijn, E. Klumperink, B. Nauta","doi":"10.1109/ESSCIR.2004.1356620","DOIUrl":null,"url":null,"abstract":"This paper presents a wideband high-linearity RF receiver-front-end, implemented in standard 0.18 /spl mu/m CMOS technology. The design employs a noise-canceling LNA in combination with two passive mixers, followed by lowpass-filtering and amplification at IF. The achieved bandwidth is >2 GHz, with a noise figure of 6.5 dB, +1 dBm IIP/sub 3/, +34.5 dBm IIP/sub 2/ and <50 kHz 1/f-noise corner frequency.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A wideband high-linearity RF receiver front-end in CMOS\",\"authors\":\"V. Arkesteijn, E. Klumperink, B. Nauta\",\"doi\":\"10.1109/ESSCIR.2004.1356620\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a wideband high-linearity RF receiver-front-end, implemented in standard 0.18 /spl mu/m CMOS technology. The design employs a noise-canceling LNA in combination with two passive mixers, followed by lowpass-filtering and amplification at IF. The achieved bandwidth is >2 GHz, with a noise figure of 6.5 dB, +1 dBm IIP/sub 3/, +34.5 dBm IIP/sub 2/ and <50 kHz 1/f-noise corner frequency.\",\"PeriodicalId\":294077,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2004.1356620\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A wideband high-linearity RF receiver front-end in CMOS
This paper presents a wideband high-linearity RF receiver-front-end, implemented in standard 0.18 /spl mu/m CMOS technology. The design employs a noise-canceling LNA in combination with two passive mixers, followed by lowpass-filtering and amplification at IF. The achieved bandwidth is >2 GHz, with a noise figure of 6.5 dB, +1 dBm IIP/sub 3/, +34.5 dBm IIP/sub 2/ and <50 kHz 1/f-noise corner frequency.
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