A Single-Event Upset Evaluation Approach Using Ion-Induced Sensitive Area

This paper presents a circuit-level simulation approach. It is used to evaluate heavy ions induced single-event upset (SEU). The proposed approach firstly measures the ion-induce sensitive area with different LET values. Then, it calculates the distance between heavy ion locations and the sensitive transistor locations. The proposed approach compares the calculated distances with the measured sensitive area to determine the SEU characteristics. Heavy ion experiment is used to validate the capability of the proposed simulation approach. Simulated SEU cross sections show good agreement with experimental results.