实验验证，温度依赖的物理模型/参数功率器件仿真

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583742

M. Isberg, P. Jonsson, F. Masszi, F. Vojdani, H. Bleichner, M. Rosling, E. Nordlander

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引用次数: 1

摘要

本文讨论了可靠的物理模型/参数在电力器件漂移扩散装置仿真中的重要性。简单的器件，二极管，和相当复杂的结构，栅极关断晶闸管(GTO:s)已被研究。利用电学和光学测量技术，对测量数据和模拟结果进行了比较。提出了新的俄歇复合参数值和300-450 K范围内肖克利-里德-霍尔寿命与温度的关系。

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Experimentally verified, temperature dependent physical models/parameters for power device simulation

This paper discusses the importance of reliable physical models/parameters used in drift-diffusion device simulation of power devices. Simple devices, diodes, and considerably more complicated structures, Gate Turn-Off thyristors (GTO:s) have been investigated. Using both electrical and optical measurement techniques, comparisons have been made between measured data and simulated results. A proposal is made for new Auger recombination parameter values and for the temperature dependence of the Shockley-Read-Hall lifetime in the temperature range of 300-450 K.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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