A Novel Reverse Conducting SOI-LIGBT with Double Integrated NMOS for Enhanced Reverse Recovery

The reverse recovery failure of the inherent diode in Separated-Shorted-Anode lateral insulated gate bipolar transistor (SSA-LIGBT) is investigated through Sentaurus TCAD. During reverse recovery process, high current commutating rate di/dt will result in large reverse recovery current peak. It is found that large reverse recovery current peak flowing through the P-body can easily trigger the parasitic NPN transistor at the emitter side. Subsequently, the triggered NPN transistor finally results in the reverse recovery failure of the inherent diode in SSA-LIGBT. A novel structure with double integrated NMOS is proposed to achieve high reverse recovery robustness. Furthermore, the new structure can eliminate Negative Differential Resistance regime completely at the same time.