布线密度和柱结构对先进低钾铜芯片封装相互作用的影响

2020 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2020-04-01 DOI:10.1109/IRPS45951.2020.9128333

Weishen Chu, Laura Spinella, D. Shirley, P. Ho

{"title":"布线密度和柱结构对先进低钾铜芯片封装相互作用的影响","authors":"Weishen Chu, Laura Spinella, D. Shirley, P. Ho","doi":"10.1109/IRPS45951.2020.9128333","DOIUrl":null,"url":null,"abstract":"Effects of wiring density and Cu pillar structure, two key features for advanced Cu low-k chips, on chip package interaction (CPI) were investigated. A multi-level finite element analysis (FEA) model was developed to evaluate the effects on CPI based on the energy release rate driving delamination. The effect of wiring density in low-k dielectric layers and the interaction effect between intermetallic compound and wiring design were quantified to assess CPI reliability.","PeriodicalId":116002,"journal":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Effects of Wiring Density and Pillar Structure on Chip Package Interaction for Advanced Cu Low-k Chips\",\"authors\":\"Weishen Chu, Laura Spinella, D. Shirley, P. Ho\",\"doi\":\"10.1109/IRPS45951.2020.9128333\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effects of wiring density and Cu pillar structure, two key features for advanced Cu low-k chips, on chip package interaction (CPI) were investigated. A multi-level finite element analysis (FEA) model was developed to evaluate the effects on CPI based on the energy release rate driving delamination. The effect of wiring density in low-k dielectric layers and the interaction effect between intermetallic compound and wiring design were quantified to assess CPI reliability.\",\"PeriodicalId\":116002,\"journal\":{\"name\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS45951.2020.9128333\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS45951.2020.9128333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

研究了先进低钾铜芯片的两大关键特征——布线密度和铜柱结构对芯片封装相互作用(CPI)的影响。建立了基于能量释放率驱动分层对CPI影响的多层次有限元分析模型。量化了低k介电层布线密度的影响以及金属间化合物与布线设计之间的相互作用效应，以评估CPI的可靠性。

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Effects of Wiring Density and Pillar Structure on Chip Package Interaction for Advanced Cu Low-k Chips

Effects of wiring density and Cu pillar structure, two key features for advanced Cu low-k chips, on chip package interaction (CPI) were investigated. A multi-level finite element analysis (FEA) model was developed to evaluate the effects on CPI based on the energy release rate driving delamination. The effect of wiring density in low-k dielectric layers and the interaction effect between intermetallic compound and wiring design were quantified to assess CPI reliability.

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2020 IEEE International Reliability Physics Symposium (IRPS)

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