{"title":"用产量有限的技术制造高速处理器的封装设计","authors":"A. Garg, James Loy, H. Greub, J. McDonald","doi":"10.1109/GLSV.1994.289985","DOIUrl":null,"url":null,"abstract":"The design of an advanced high density thin film multichip module (MCM) for a 1-ns cycle time Fast Reduced Instruction Set Computer (F-RISC/G) is described. The processor has been implemented with GaAs/AlGaAs heterojunction bipolar transistor (HBT) technology from Rockwell International. The F-RISC/G package pushes the state of the art to satisfy electrical, thermal and thermomechanical constraints to take advantage of this high speed circuit technology. A unique approach is developed to link the electrical and thermomechanical design environments using a common database.<<ETX>>","PeriodicalId":330584,"journal":{"name":"Proceedings of 4th Great Lakes Symposium on VLSI","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Design of a package for a high-speed processor made with yield-limited technology\",\"authors\":\"A. Garg, James Loy, H. Greub, J. McDonald\",\"doi\":\"10.1109/GLSV.1994.289985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of an advanced high density thin film multichip module (MCM) for a 1-ns cycle time Fast Reduced Instruction Set Computer (F-RISC/G) is described. The processor has been implemented with GaAs/AlGaAs heterojunction bipolar transistor (HBT) technology from Rockwell International. The F-RISC/G package pushes the state of the art to satisfy electrical, thermal and thermomechanical constraints to take advantage of this high speed circuit technology. A unique approach is developed to link the electrical and thermomechanical design environments using a common database.<<ETX>>\",\"PeriodicalId\":330584,\"journal\":{\"name\":\"Proceedings of 4th Great Lakes Symposium on VLSI\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th Great Lakes Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GLSV.1994.289985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th Great Lakes Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GLSV.1994.289985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of a package for a high-speed processor made with yield-limited technology
The design of an advanced high density thin film multichip module (MCM) for a 1-ns cycle time Fast Reduced Instruction Set Computer (F-RISC/G) is described. The processor has been implemented with GaAs/AlGaAs heterojunction bipolar transistor (HBT) technology from Rockwell International. The F-RISC/G package pushes the state of the art to satisfy electrical, thermal and thermomechanical constraints to take advantage of this high speed circuit technology. A unique approach is developed to link the electrical and thermomechanical design environments using a common database.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
