用于k波段应用的BiCMOS压控振荡器和倍频器

2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI:10.1109/RFIC.2008.4561494

T. Copani, B. Bakkaloglu, S. Kiaei

{"title":"用于k波段应用的BiCMOS压控振荡器和倍频器","authors":"T. Copani, B. Bakkaloglu, S. Kiaei","doi":"10.1109/RFIC.2008.4561494","DOIUrl":null,"url":null,"abstract":"A mm-wave voltage controlled oscillator and frequency doubler for 18-GHz applications are presented. A 9-GHz voltage controlled oscillator is implemented by using a double LC-tank resonator to improve loaded Q at high frequencies. Inductive coupling is exploited to design an 18-GHz frequency doubler, which improves spurious rejection and immunity to supply noise. The prototype is implemented in a SiGe BiCMOS process and performs a FOM of -183 dBc/Hz at 19 GHz.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A BiCMOS voltage controlled oscillator and frequency doubler for K-band applications\",\"authors\":\"T. Copani, B. Bakkaloglu, S. Kiaei\",\"doi\":\"10.1109/RFIC.2008.4561494\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A mm-wave voltage controlled oscillator and frequency doubler for 18-GHz applications are presented. A 9-GHz voltage controlled oscillator is implemented by using a double LC-tank resonator to improve loaded Q at high frequencies. Inductive coupling is exploited to design an 18-GHz frequency doubler, which improves spurious rejection and immunity to supply noise. The prototype is implemented in a SiGe BiCMOS process and performs a FOM of -183 dBc/Hz at 19 GHz.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561494\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

介绍了一种适用于18ghz应用的毫米波压控振荡器和倍频器。采用双LC-tank谐振器实现了9ghz压控振荡器，提高了高频负载Q。利用电感耦合设计了18ghz倍频器，提高了杂散抑制和抗电源噪声能力。该原型在SiGe BiCMOS工艺中实现，并在19 GHz时执行-183 dBc/Hz的FOM。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A BiCMOS voltage controlled oscillator and frequency doubler for K-band applications

A mm-wave voltage controlled oscillator and frequency doubler for 18-GHz applications are presented. A 9-GHz voltage controlled oscillator is implemented by using a double LC-tank resonator to improve loaded Q at high frequencies. Inductive coupling is exploited to design an 18-GHz frequency doubler, which improves spurious rejection and immunity to supply noise. The prototype is implemented in a SiGe BiCMOS process and performs a FOM of -183 dBc/Hz at 19 GHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 IEEE Radio Frequency Integrated Circuits Symposium

自引率

0.00%

发文量