一种采用H9SOIFEM CMOS 130nm设计的1.95GHz 28dBm全集成封装功率放大器，具有3G带宽80 (PAE+ACLR):开发一种优化的高性能RF SOI功率电池

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2016-10-01 DOI:10.1109/S3S.2016.7804390

V. Knopik, G. Bertrand, A. Monroy, S. Gachon, J. Morelle, P. Cathelin, B. Butaye

{"title":"一种采用H9SOIFEM CMOS 130nm设计的1.95GHz 28dBm全集成封装功率放大器，具有3G带宽80 (PAE+ACLR):开发一种优化的高性能RF SOI功率电池","authors":"V. Knopik, G. Bertrand, A. Monroy, S. Gachon, J. Morelle, P. Cathelin, B. Butaye","doi":"10.1109/S3S.2016.7804390","DOIUrl":null,"url":null,"abstract":"A fully integrated and packaged Power Amplifier (PA) has been realized in 130nm STMicroelectronics H9SOIFEM. The PA is based on a new dedicated power cell delivering very good RF performances. At 28dBm output power, ACPR is -40dBc and PAE is 40%, reaching a FOM (ACPR+PAE) of 80 at 1.95GHz 3G standard, under 3.4V. Neither linearization nor efficiency enhancement technics have been used. The core power transistor provides very high power added efficiency (PAE) of 75% at a gain of 18dB typical, around 2GHz. This technology has been optimized for low cost RF front end module (FEM) applications.","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 1.95GHz 28dBm fully integrated packaged power amplifier presenting a 3G FOM of 80 (PAE+ACLR) designed in H9SOIFEM CMOS 130nm: Development of an optimized high performances RF SOI power cell\",\"authors\":\"V. Knopik, G. Bertrand, A. Monroy, S. Gachon, J. Morelle, P. Cathelin, B. Butaye\",\"doi\":\"10.1109/S3S.2016.7804390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated and packaged Power Amplifier (PA) has been realized in 130nm STMicroelectronics H9SOIFEM. The PA is based on a new dedicated power cell delivering very good RF performances. At 28dBm output power, ACPR is -40dBc and PAE is 40%, reaching a FOM (ACPR+PAE) of 80 at 1.95GHz 3G standard, under 3.4V. Neither linearization nor efficiency enhancement technics have been used. The core power transistor provides very high power added efficiency (PAE) of 75% at a gain of 18dB typical, around 2GHz. This technology has been optimized for low cost RF front end module (FEM) applications.\",\"PeriodicalId\":145660,\"journal\":{\"name\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2016.7804390\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

一种完全集成封装的功率放大器(PA)已在130纳米意法半导体H9SOIFEM中实现。PA基于一种新的专用电源电池，提供非常好的射频性能。在28dBm输出功率下，ACPR为-40dBc, PAE为40%，在3.4V下1.95GHz 3G标准下，FOM (ACPR+PAE)为80。既没有使用线性化技术，也没有使用效率增强技术。核心功率晶体管提供非常高的功率附加效率(PAE) 75%，增益为18dB典型，约2GHz。该技术已针对低成本射频前端模块(FEM)应用进行了优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 1.95GHz 28dBm fully integrated packaged power amplifier presenting a 3G FOM of 80 (PAE+ACLR) designed in H9SOIFEM CMOS 130nm: Development of an optimized high performances RF SOI power cell

A fully integrated and packaged Power Amplifier (PA) has been realized in 130nm STMicroelectronics H9SOIFEM. The PA is based on a new dedicated power cell delivering very good RF performances. At 28dBm output power, ACPR is -40dBc and PAE is 40%, reaching a FOM (ACPR+PAE) of 80 at 1.95GHz 3G standard, under 3.4V. Neither linearization nor efficiency enhancement technics have been used. The core power transistor provides very high power added efficiency (PAE) of 75% at a gain of 18dB typical, around 2GHz. This technology has been optimized for low cost RF front end module (FEM) applications.

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2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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