基于晶圆探针的陶瓷微带电路校准与测量

J. Wallace, G. A. Ellis
{"title":"基于晶圆探针的陶瓷微带电路校准与测量","authors":"J. Wallace, G. A. Ellis","doi":"10.1109/ARFTG.1989.323934","DOIUrl":null,"url":null,"abstract":"Two methods for calibration and measurement of microstrip circuits fabricated on 10 mil thick alumina will be presented. The first method may be used from 7 to 30 GHz. The second method is best suited for measurements below 10 GHz. The basic measurement configuration consisted of: 1) an automatic network analyzer with thru-reflect-line (TRL) [l] calibration capability; 2) wafer probe station and coplanar probe heads normally used for measurement of GaAs circuits; and 3) microstrip TRL calibration standards with coplanar to microstrip transitions. Data will be presented on two types of coplanar to microstrip transitions including: 1) circuit dimensions; 2) transition data calibrated to the coplanar probe tips; 3) calibration data using microstrip TRL calibrations; 4) repeatability data of the transitions including circuit to circuit variations and substrate to substrate variations; and 5) error estimates.","PeriodicalId":358927,"journal":{"name":"33rd ARFTG Conference Digest","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Calibration and Measurement of Ceramic Microstrip Circuits Using a Wafer Probe Station\",\"authors\":\"J. Wallace, G. A. Ellis\",\"doi\":\"10.1109/ARFTG.1989.323934\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two methods for calibration and measurement of microstrip circuits fabricated on 10 mil thick alumina will be presented. The first method may be used from 7 to 30 GHz. The second method is best suited for measurements below 10 GHz. The basic measurement configuration consisted of: 1) an automatic network analyzer with thru-reflect-line (TRL) [l] calibration capability; 2) wafer probe station and coplanar probe heads normally used for measurement of GaAs circuits; and 3) microstrip TRL calibration standards with coplanar to microstrip transitions. Data will be presented on two types of coplanar to microstrip transitions including: 1) circuit dimensions; 2) transition data calibrated to the coplanar probe tips; 3) calibration data using microstrip TRL calibrations; 4) repeatability data of the transitions including circuit to circuit variations and substrate to substrate variations; and 5) error estimates.\",\"PeriodicalId\":358927,\"journal\":{\"name\":\"33rd ARFTG Conference Digest\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"33rd ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.1989.323934\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"33rd ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1989.323934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了在10mil厚的氧化铝上制作的微带电路的两种校准和测量方法。第一种方法可以在7至30 GHz范围内使用。第二种方法最适合于低于10ghz的测量。基本测量配置包括:1)一台具有透反射线(TRL)[1]校准能力的自动网络分析仪;2)通常用于测量砷化镓电路的晶圆探头站和共面探头;3)共面到微带转换的微带TRL校准标准。数据将介绍两种类型的共面到微带转换,包括:1)电路尺寸;2)校准到共面探针尖端的过渡数据;3)标定数据采用微带TRL标定;4)转换的可重复性数据,包括电路到电路的变化和衬底到衬底的变化;5)误差估计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Calibration and Measurement of Ceramic Microstrip Circuits Using a Wafer Probe Station
Two methods for calibration and measurement of microstrip circuits fabricated on 10 mil thick alumina will be presented. The first method may be used from 7 to 30 GHz. The second method is best suited for measurements below 10 GHz. The basic measurement configuration consisted of: 1) an automatic network analyzer with thru-reflect-line (TRL) [l] calibration capability; 2) wafer probe station and coplanar probe heads normally used for measurement of GaAs circuits; and 3) microstrip TRL calibration standards with coplanar to microstrip transitions. Data will be presented on two types of coplanar to microstrip transitions including: 1) circuit dimensions; 2) transition data calibrated to the coplanar probe tips; 3) calibration data using microstrip TRL calibrations; 4) repeatability data of the transitions including circuit to circuit variations and substrate to substrate variations; and 5) error estimates.
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