肖特基二极管上的Si/sub 1-x/Ge/sub x/， Si/sub 1-x-y/Ge/sub x/C/sub y/和Si/sub 1-y/C/sub y/合金

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-04-29 DOI:10.1109/SIM.1996.571083

V. Aubry-Fortuna, M. Mamor, F. Meyer, S. Bodnar, J. Regolini

{"title":"肖特基二极管上的Si/sub 1-x/Ge/sub x/， Si/sub 1-x-y/Ge/sub x/C/sub y/和Si/sub 1-y/C/sub y/合金","authors":"V. Aubry-Fortuna, M. Mamor, F. Meyer, S. Bodnar, J. Regolini","doi":"10.1109/SIM.1996.571083","DOIUrl":null,"url":null,"abstract":"In previous studies, we have investigated the Schottky barrier height of tungsten (W) on p-type and n-type Si/sub 1-x/Ge/sub x//Si as a function of Ge-content (0/spl les/x/spl les/33%) and Si/sub 1-x/Ge/sub x/ thickness for a given composition. The barrier height to n-type does not vary significantly while that to p-type follows the same trends as the band-gap: it decreases with x and the strain. In this study, we have extended our measurements to the ternary alloy Si/sub 1-x-y/Ge/sub x/C/sub y/ and to the binary alloy Si/sub 1-y/C/sub y/. The behavior of the barrier height W/Si/sub 1-x-y/Ge/sub x/C/sub y/ is similar to that of W/Si/sub 1-x/Ge/sub x/: for p-type, it increases with the strain relaxation induced by the incorporation of C while it remains constant for n-type. On the other hand, results on W/Si/sub 1-y/C/sub y/ are quite different, suggesting a change in the Fermi level pinning position.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Schottky diodes on Si/sub 1-x/Ge/sub x/, Si/sub 1-x-y/Ge/sub x/C/sub y/ and Si/sub 1-y/C/sub y/ alloys\",\"authors\":\"V. Aubry-Fortuna, M. Mamor, F. Meyer, S. Bodnar, J. Regolini\",\"doi\":\"10.1109/SIM.1996.571083\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In previous studies, we have investigated the Schottky barrier height of tungsten (W) on p-type and n-type Si/sub 1-x/Ge/sub x//Si as a function of Ge-content (0/spl les/x/spl les/33%) and Si/sub 1-x/Ge/sub x/ thickness for a given composition. The barrier height to n-type does not vary significantly while that to p-type follows the same trends as the band-gap: it decreases with x and the strain. In this study, we have extended our measurements to the ternary alloy Si/sub 1-x-y/Ge/sub x/C/sub y/ and to the binary alloy Si/sub 1-y/C/sub y/. The behavior of the barrier height W/Si/sub 1-x-y/Ge/sub x/C/sub y/ is similar to that of W/Si/sub 1-x/Ge/sub x/: for p-type, it increases with the strain relaxation induced by the incorporation of C while it remains constant for n-type. On the other hand, results on W/Si/sub 1-y/C/sub y/ are quite different, suggesting a change in the Fermi level pinning position.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.571083\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.571083","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在之前的研究中，我们研究了钨在p型和n型Si/sub - 1-x/Ge/sub -x/ Si上的肖特基势垒高度(W)与特定成分中Ge含量(0/spl les/x/spl les/33%)和Si/sub - 1-x/Ge/sub -x/厚度的关系。n型势垒高度变化不大，p型势垒高度随带隙变化趋势相同，随x和应变的增大而减小。在这项研究中，我们将测量范围扩展到三元合金Si/sub 1-x-y/Ge/sub x/C/sub y/和二元合金Si/sub 1-y/C/sub y/。势垒高度W/Si/sub - 1-x-y/Ge/sub -x/ C/sub -y/的变化规律与W/Si/sub - 1-x/Ge/sub -x/相似，p型势垒高度随着C的加入引起的应变松弛而增加，而n型势垒高度保持不变。另一方面，W/Si/sub - 1-y/C/sub -y/的结果有很大的不同，这表明费米能级的固定位置发生了变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Schottky diodes on Si/sub 1-x/Ge/sub x/, Si/sub 1-x-y/Ge/sub x/C/sub y/ and Si/sub 1-y/C/sub y/ alloys

In previous studies, we have investigated the Schottky barrier height of tungsten (W) on p-type and n-type Si/sub 1-x/Ge/sub x//Si as a function of Ge-content (0/spl les/x/spl les/33%) and Si/sub 1-x/Ge/sub x/ thickness for a given composition. The barrier height to n-type does not vary significantly while that to p-type follows the same trends as the band-gap: it decreases with x and the strain. In this study, we have extended our measurements to the ternary alloy Si/sub 1-x-y/Ge/sub x/C/sub y/ and to the binary alloy Si/sub 1-y/C/sub y/. The behavior of the barrier height W/Si/sub 1-x-y/Ge/sub x/C/sub y/ is similar to that of W/Si/sub 1-x/Ge/sub x/: for p-type, it increases with the strain relaxation induced by the incorporation of C while it remains constant for n-type. On the other hand, results on W/Si/sub 1-y/C/sub y/ are quite different, suggesting a change in the Fermi level pinning position.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of Semiconducting and Semi-Insulating Materials Conference

自引率

0.00%

发文量