{"title":"带有支持电子器件的1mb气泡存储器","authors":"S. Nicolino","doi":"10.1109/ISSCC.1980.1156141","DOIUrl":null,"url":null,"abstract":"A 1Mb bubble memory system, including the bubble device, made on garnet material, and five silicon support devices, made with bipolar, CMOS, VMOS, NMOS and HMOS processes, will be discussed.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"XXIII 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"One Mb bubble memory with support electronics\",\"authors\":\"S. Nicolino\",\"doi\":\"10.1109/ISSCC.1980.1156141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1Mb bubble memory system, including the bubble device, made on garnet material, and five silicon support devices, made with bipolar, CMOS, VMOS, NMOS and HMOS processes, will be discussed.\",\"PeriodicalId\":229101,\"journal\":{\"name\":\"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"XXIII 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1980.1156141\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1980.1156141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1Mb bubble memory system, including the bubble device, made on garnet material, and five silicon support devices, made with bipolar, CMOS, VMOS, NMOS and HMOS processes, will be discussed.
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