一种可扩展的64 × 64像素单片HV-CMOS传感器,用于强子治疗,具有1ns时间戳能力和像素内ADC

N. Massari, A. D'Andragora, M. Perenzoni, Andrey Selijak, Carlos Chavez Barajas, Alan Taylor, J. Taylor, G. Casse, J. Pettingell, Ignacio Di Biase
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引用次数: 0

摘要

在本文中,我们提出了一个64x64像素的阵列,设计用于质子束源的表征。可配置的像素允许在短时间窗口内测量被检测粒子的能量或到达时间,或者它可以在预定义的观察时间内计数事件。为了避免质子通量高时的堆积效应,采用了信号门接采样保持器和像素内单斜率ADC。为了保证整个阵列具有良好的时间分辨率(1ns),设计了一种可扩展的架构,可以在不进行重大修改的情况下扩展传感器的分辨率。该芯片已经进行了电学表征,并使用光刺激和beta源进行了测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A scalable $64\times 64$ pixels monolithic HV-CMOS sensor for hadron therapy with 1ns time stamping capability and in-pixel ADC
In this paper we present an array of 64x64 pixels, designed for proton beam source characterization. The configurable pixel allows to measure the energy or the arrival time of detected particles in a short time window, or it can count events for a pre-defined observation time. The adopted solution uses a signal gating followed by a sample and hold and in-pixel single slope ADC to avoid pile-up effect when the flux of protons is high. In order to guarantee a fine time resolution (1ns) across the entire array, a scalable architecture has been conceived for possible extending the resolution of the sensor with no major modifications. The chip has been electrically characterized and tested with optical stimulus and using a beta source.
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