降低异质结双极晶体管基极集电极电容的横向蚀刻凹边技术

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-12-31 DOI:10.1109/GAAS.1995.528986

W. Liu, D. Hill, H. Chau, J. Sweder, T. Nagle, J. Delaney

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引用次数: 23

摘要

我们报道了一种新的制造工艺，旨在降低AlGaAs-GaAs异质结双极晶体管的寄生结电容。该工艺被称为横向蚀刻凹边(LEU)工艺，物理地去除外部基底-集电极结区域，形成悬臂结构。与传统器件的直流、小信号和大信号性能进行了比较。

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Laterally etched undercut (LEU) technique to reduce base-collector capacitances in heterojunction bipolar transistors

We report a novel fabrication process aimed at reducing the parasitic junction capacitance of AlGaAs-GaAs heterojunction bipolar transistors. The process, named as the Laterally Etched Undercut (LEU) process, physically removes the extrinsic base-collector junction area and results in a cantilever structure. The DC, small-signal, and large-signal performances of the LEU devices are compared to those obtained from the conventional devices.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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