Jonggook Kim, B. O'Connell, W. K. Teng, M. Poulter
{"title":"混合信号应用的铜顶互连可靠性","authors":"Jonggook Kim, B. O'Connell, W. K. Teng, M. Poulter","doi":"10.1109/IIRW.2010.5706483","DOIUrl":null,"url":null,"abstract":"The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (Cu-Top) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also characterized by dependence of time, temperature, metal width, and additional dielectric & conductive layers over Cu-Top. As a result, this approach enables the prediction of the accumulated resistance drift under any conditions for a lifetime operation.","PeriodicalId":332664,"journal":{"name":"2010 IEEE International Integrated Reliability Workshop Final Report","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Copper - top interconnect reliability for mixed signal applications\",\"authors\":\"Jonggook Kim, B. O'Connell, W. K. Teng, M. Poulter\",\"doi\":\"10.1109/IIRW.2010.5706483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (Cu-Top) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also characterized by dependence of time, temperature, metal width, and additional dielectric & conductive layers over Cu-Top. As a result, this approach enables the prediction of the accumulated resistance drift under any conditions for a lifetime operation.\",\"PeriodicalId\":332664,\"journal\":{\"name\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2010.5706483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2010.5706483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Copper - top interconnect reliability for mixed signal applications
The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (Cu-Top) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also characterized by dependence of time, temperature, metal width, and additional dielectric & conductive layers over Cu-Top. As a result, this approach enables the prediction of the accumulated resistance drift under any conditions for a lifetime operation.
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