P. Deixler, A. Rodriguez, W. de Boer, H. Sun, R. Colclaser, D. Bower, N. Bell, A. Yao, R. Brock, Y. Bouttement, G. Hurkx, L. Tiemeijer, J. Paasschens, H.G.A. Huizing, D. Hartskeerl, P. Agrarwal, P. Magnée, E. Aksen, J. Slotboom
{"title":"QUBiC4X:一种f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS制造技术，具有用于新兴微波应用的精英无源","authors":"P. Deixler, A. Rodriguez, W. de Boer, H. Sun, R. Colclaser, D. Bower, N. Bell, A. Yao, R. Brock, Y. Bouttement, G. Hurkx, L. Tiemeijer, J. Paasschens, H.G.A. Huizing, D. Hartskeerl, P. Agrarwal, P. Magnée, E. Aksen, J. Slotboom","doi":"10.1109/BIPOL.2004.1365788","DOIUrl":null,"url":null,"abstract":"P. Deixler, A. Rodriguez, W. De Boer, H. Sun, R Colclaser, D. Bower, N. Bell, A. Yao’, RBrock’, Y. Bouttement.’, G.A.M. Hurkx4>, L.F. TiemeijeS, J.C.J. Paassehens4”, H.G.A Huizing”,D.M.H. Hartskeer14, P. Agamal’, P.H.C Magnee’, E. Aksen’ and J.W. Slotboom6 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA ’Philips RF Device Modeling Group, San Jose, USA; ’ Philips RF Modeling Group, Caen, France ‘ Philips Natlab, Eindboven, The Netherlands; ’ Philips Research Leuven, Leuven, Belgium; ‘Univ. Delft, Netherlands Email: Peter.Deixler@philips.com, Phone: ++1 845 902 1586 Abstract QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-BiCMOS technology for emerging microwave applications with NPN fr/f,, up to l30/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":"{\"title\":\"QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications\",\"authors\":\"P. Deixler, A. Rodriguez, W. de Boer, H. Sun, R. Colclaser, D. Bower, N. Bell, A. Yao, R. Brock, Y. Bouttement, G. Hurkx, L. Tiemeijer, J. Paasschens, H.G.A. Huizing, D. Hartskeerl, P. Agrarwal, P. Magnée, E. Aksen, J. Slotboom\",\"doi\":\"10.1109/BIPOL.2004.1365788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"P. Deixler, A. Rodriguez, W. De Boer, H. Sun, R Colclaser, D. Bower, N. Bell, A. Yao’, RBrock’, Y. Bouttement.’, G.A.M. Hurkx4>, L.F. TiemeijeS, J.C.J. Paassehens4”, H.G.A Huizing”,D.M.H. Hartskeer14, P. Agamal’, P.H.C Magnee’, E. Aksen’ and J.W. Slotboom6 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA ’Philips RF Device Modeling Group, San Jose, USA; ’ Philips RF Modeling Group, Caen, France ‘ Philips Natlab, Eindboven, The Netherlands; ’ Philips Research Leuven, Leuven, Belgium; ‘Univ. Delft, Netherlands Email: Peter.Deixler@philips.com, Phone: ++1 845 902 1586 Abstract QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-BiCMOS technology for emerging microwave applications with NPN fr/f,, up to l30/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"37\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365788\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 37
摘要
P. Deixler, A. Rodriguez, W. De Boer, H. Sun, R . Colclaser, D. Bower, N. Bell, A. Yao '， R . brock '， Y. Bouttement。[，]胡克明[4]，李立明，李立明，李立明[4]Hartskeer14, P. Agamal '， p.h.c. magnet '， E. Aksen '和J.W. Slotboom6 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA; Philips RF Device Modeling Group, San Jose, USA;飞利浦射频建模集团，卡昂，法国;飞利浦实验室，埃因霍温，荷兰;鲁汶飞利浦研究中心，鲁汶，比利时;的大学。摘要QUBiC4X是一种具有成本效益的超高速SiGe:C RF-BiCMOS技术，适用于新兴的微波应用，具有NPN fr/f，高达130 / 140ghz，增强的rf定向2.5V CMOS, SiGe:C功率放大器具有88%的功率附加效率，卓越的衬底隔离，全套件精英高密度无源，5金属层和先进的设计流程。
QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications
P. Deixler, A. Rodriguez, W. De Boer, H. Sun, R Colclaser, D. Bower, N. Bell, A. Yao’, RBrock’, Y. Bouttement.’, G.A.M. Hurkx4>, L.F. TiemeijeS, J.C.J. Paassehens4”, H.G.A Huizing”,D.M.H. Hartskeer14, P. Agamal’, P.H.C Magnee’, E. Aksen’ and J.W. Slotboom6 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA ’Philips RF Device Modeling Group, San Jose, USA; ’ Philips RF Modeling Group, Caen, France ‘ Philips Natlab, Eindboven, The Netherlands; ’ Philips Research Leuven, Leuven, Belgium; ‘Univ. Delft, Netherlands Email: Peter.Deixler@philips.com, Phone: ++1 845 902 1586 Abstract QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-BiCMOS technology for emerging microwave applications with NPN fr/f,, up to l30/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.
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