非对称v型双量子阱结构中输运迁移率的改进

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI:10.1109/EDKCON56221.2022.10032965

D. Jena, Tara Prasanna Dash, N. Sahoo, A. Sahu, A. K. Panda, T. Sahu

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引用次数: 1

摘要

理论上报道了通过改变非对称v型双量子阱(AVDQW)结构的阱宽w来提高输运电子迁移率μ。侧垒分别向衬底和表面掺杂不同浓度的Nd1(变化)和Nd2(固定)，从而产生结构的不对称性。w增大，μ增大。μ的大小由合金无序散射决定，而μ随Nd1的变化趋势主要由杂质散射决定。

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Improvement of Transport Mobility in Asymmetric V-shaped Double Quantum Well Structure

The improvement of transport electron mobility μ is theoretically reported through a change in well width w in an asymmetric V-shaped double quantum well (AVDQW) structure. The side barriers are doped with different doping concentrations i.e., Nd1 (vary) and Nd2 (fixed) towards the substrate and surface respectively which produces asymmetry in the structure. An increase in w enhances μ. The magnitude of μ is decided by the alloy disorder scattering but the trend in the variation of μ as a function of Nd1 is mainly decided by the impurity scattering.

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2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

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