采用栅极和块驱动晶体管的10gb /s低功耗低压CTLE

Amin Aghighi, A. Alameh, M. Taherzadeh‐Sani, F. Nabki
{"title":"采用栅极和块驱动晶体管的10gb /s低功耗低压CTLE","authors":"Amin Aghighi, A. Alameh, M. Taherzadeh‐Sani, F. Nabki","doi":"10.1109/ICECS.2016.7841171","DOIUrl":null,"url":null,"abstract":"The continuous time linear equalizer (CTLE) which compensates for the high frequency loss of electrical channels is one of the key components in the design of digital serializer / desrializer (SerDes) circuits. A new technique is described to improve the CTLE performance without any area or power overhead. This technique utilizes the bulk pin of transistors as a second gate. The proposed CTLE is designed and simulated in 130 nm CMOS technology. Post-layout simulation results demonstrate that the proposed technique can improve the eye opening of the conventional CTLE by approximately 68% at 10-Gb/s. The proposed CTLE compensates for the 12 dB loss of a 12 inches backplane at 10-Gb/s. The power consumption is only of 4.1 mW and 2 mW for a 1.2 V and 0.7 V power supply, respectively.","PeriodicalId":205556,"journal":{"name":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 10-Gb/s low-power low-voltage CTLE using gate and bulk driven transistors\",\"authors\":\"Amin Aghighi, A. Alameh, M. Taherzadeh‐Sani, F. Nabki\",\"doi\":\"10.1109/ICECS.2016.7841171\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The continuous time linear equalizer (CTLE) which compensates for the high frequency loss of electrical channels is one of the key components in the design of digital serializer / desrializer (SerDes) circuits. A new technique is described to improve the CTLE performance without any area or power overhead. This technique utilizes the bulk pin of transistors as a second gate. The proposed CTLE is designed and simulated in 130 nm CMOS technology. Post-layout simulation results demonstrate that the proposed technique can improve the eye opening of the conventional CTLE by approximately 68% at 10-Gb/s. The proposed CTLE compensates for the 12 dB loss of a 12 inches backplane at 10-Gb/s. The power consumption is only of 4.1 mW and 2 mW for a 1.2 V and 0.7 V power supply, respectively.\",\"PeriodicalId\":205556,\"journal\":{\"name\":\"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2016.7841171\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2016.7841171","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

补偿电通道高频损耗的连续时间线性均衡器(CTLE)是数字串行/描述器(SerDes)电路设计中的关键部件之一。本文介绍了一种不需要任何面积和功率开销就能提高CTLE性能的新技术。这种技术利用晶体管的体积引脚作为第二栅极。在130 nm CMOS工艺下设计并仿真了CTLE。布局后仿真结果表明,该技术在10gb /s速率下可将传统CTLE的孔径提高约68%。提出的CTLE补偿了12英寸背板在10gb /s下的12db损耗。1.2 V电源和0.7 V电源的功耗分别为4.1 mW和2 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 10-Gb/s low-power low-voltage CTLE using gate and bulk driven transistors
The continuous time linear equalizer (CTLE) which compensates for the high frequency loss of electrical channels is one of the key components in the design of digital serializer / desrializer (SerDes) circuits. A new technique is described to improve the CTLE performance without any area or power overhead. This technique utilizes the bulk pin of transistors as a second gate. The proposed CTLE is designed and simulated in 130 nm CMOS technology. Post-layout simulation results demonstrate that the proposed technique can improve the eye opening of the conventional CTLE by approximately 68% at 10-Gb/s. The proposed CTLE compensates for the 12 dB loss of a 12 inches backplane at 10-Gb/s. The power consumption is only of 4.1 mW and 2 mW for a 1.2 V and 0.7 V power supply, respectively.
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